SH8M70TB1
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SH8M70TB1 datasheet
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МаркировкаSH8M70TB1
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ПроизводительRohm
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ОписаниеRohm SH8M70TB1 Continuous Drain Current: 3 A Current - Continuous Drain (id) @ 25?° C: 3A, 2.5A Drain To Source Voltage (vdss): 250V Drain-source Breakdown Voltage: 250 V Fet Feature: Standard Fet Type: N and P-Channel Forward Transconductance Gfs (max / Min): 0.75 S Gate Charge (qg) @ Vgs: 5.2nC @ 10V Input Capacitance (ciss) @ Vds: 180pF @ 25V Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Mounting Type: Surface Mount Package / Case: 8-SOP Power - Max: 2W Power Dissipation: 2 W Rds On (max) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V Resistance Drain-source Rds (on): 1.25 Ohms Series: - Transistor Polarity: N and P-Channel Vgs(th) (max) @ Id: 4V @ 1mA Other Names: SH8M70TB1TR
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Количество страниц8 шт.
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Форматы файлаHTML, PDF
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Новости электроники
03.06.2024
03.06.2024
02.06.2024